K3878 MOFSET-SPARE
| Parameter | Value | Description |
| Type | N-Channel MOSFET | Silicon power transistor for enhancement mode operation |
| Drain-Source Voltage (VDS) | 900 V | Maximum voltage between drain and source |
| Gate-Source Voltage (VGS) | ±30 V | Maximum voltage between gate and source |
| Continuous Drain Current (ID) | 9 A | At TC = 25°C (pulsed up to higher values) |
| Power Dissipation (PD) | 150–350 W | Varies by manufacturer; typically 150 W at TC = 25°C |
| On-State Resistance (RDS(on)) | 1.0–1.3 Ω | Typical/max at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 3–5 V | Minimum voltage to turn on the device |
| Total Gate Charge (Qg) | 60 nC | For fast switching |
| Rise Time (tr) | 25–130 ns | Switching speed |
| Output Capacitance (Coss) | 190–215 pF | At VDS = 25 V |
| Maximum Junction Temperature (Tj) | 150–175°C | Operating temperature limit |
| Package | TO-3P (TO-3PN) | Isolated metal can package for heat dissipation |
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